Fujitsu to Highlight New 65-Nanometer Process Technologies, 10 Gigabit Ethernet and the WiMAX SoC at Annual DesignCon 2006, Booth 6417 February 2006
Fujitsu Microelectronics America, Inc. (FMA) will feature its new 65-nanometer process technology at the annual DesignCon in Santa Clara, February 6-9, showing how the company's leading-edge manufacturing technologies enable a new generation of advanced products such as its 10 Gigabit Ethernet switch ICs and WiMAX system-on-chip devices.
Fujitsu will feature a road map detailing the company's 90nm, 65nm and 45nm process technologies and packaging options. Last month Fujitsu announced that it will construct a new fab to mass-produce logic semiconductors employing leading-edge 65nm process technology and 300mm wafers. The company plans to invest approximately 120 billion yen (more than $1 Billion) in the new facility by the end of March 2008. (See the related press release dated January 11, 2006.)
"Fujitsu is applying advanced process technologies to a set of complex designs that move the networking and communications industries forward dramatically," said Keith Horn, senior vice president for marketing and sales at Fujitsu Microelectronics America. "We are leading the industry in the migration of these processes, first to 90 nanometers and now to 65 nanometers, which generate the high-speed, low-power, high-performance semiconductor devices required by our customers."
TecPreview Entitled "65nm CMOS Process Technology" Set for Tues, Feb 7, at 10:15 a.m.
Paul Kim, senior marketing manager for the Foundry Services group of Fujitsu Microelectronics, will deliver a special TecPreview presentation entitled "65 Nanometer CMOS Process Technology" beginning at 10:15 a.m. on February 7. Paul will discuss how the 65nm technology serves performance-oriented applications and mobile applications that require optimal performance with long battery lives.
Fujitsu has extended its global semiconductor technology leadership with the introduction of its world-class 65nm CMOS technology for ASIC and COT customers. The company's 65nm technology shrinks gate length by 25 percent compared with 90nm technology, and provides a broad range of options for maximizing performance and minimizing power consumption.
The features of the 65nm technology include 30nm gate lengths, which is 25 percent smaller than the gate size for 90nm, CS100, transistors; speeds that are 20 percent to 30 percent faster than the speeds afforded using 90nm technology; transistor density that is doubled and SRAM cells that are only half the size of those delivered by 90nm technology. Fujitsu will start tape-out acceptance for the 65nm technology in early 2006.
About Fujitsu Microelectronics America, Inc.
Fujitsu Microelectronics America, Inc. (FMA) leads the industry in innovation. FMA provides high-quality, reliable semiconductor products and services for the networking, communications, automotive, security and other markets throughout North and South America. For more product information, please visit the company's web site http://us.fujitsu.com/micro .
Source: prnewswire
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